Article open access publication

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

Nature Communications, Springer Nature, ISSN 2041-1723

Volume 8, 1, 2017

DOI:10.1038/ncomms15376, Dimensions: pub.1085596335, PMC: PMC5458551, PMID: 28548097,



  1. (1) University of Copenhagen, grid.5254.6, KU
  2. (2) Massachusetts Institute of Technology, grid.116068.8
  3. (3) Columbia University, grid.21729.3f
  4. (4) Harvard University, grid.38142.3c
  5. (5) P.N. Lebedev Physical Institute of the Russian Academy of Sciences, grid.425806.d
  6. (6) Sandia National Laboratories, grid.474520.0


The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.


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Times Cited: 56

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