- (1) University of Copenhagen, grid.5254.6, KU
- (2) Massachusetts Institute of Technology, grid.116068.8
- (3) Columbia University, grid.21729.3f
- (4) Harvard University, grid.38142.3c
- (5) P.N. Lebedev Physical Institute of the Russian Academy of Sciences, grid.425806.d
- (6) Sandia National Laboratories, grid.474520.0
The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.