Article

Ultraviolet Interband Plasmonics With Si Nanostructures.

Nano Letters, American Chemical Society (ACS), ISSN 1530-6984

Volume 19, 11, 2019

DOI:10.1021/acs.nanolett.9b03243, Dimensions: pub.1121303817, PMID: 31560545,

Affiliations

Organisations

  1. (1) Institute of Materials Research and Engineering, grid.418788.a
  2. (2) Soochow University, grid.263761.7
  3. (3) National University of Singapore, grid.4280.e
  4. (4) University of Southern Denmark, grid.10825.3e, SDU
  5. (5) Singapore University of Technology and Design, grid.263662.5

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Singapore

China

Denmark

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Asia

Europe

Description

Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

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University of Southern Denmark

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